Dissertation
Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices > Metal - oxide - semiconductor (MOS) devices

Pentacene-based OFETs’ Materials and Device

Author ZhangXuHui
Tutor ZhangFuJia
School Lanzhou University
Course Microelectronics and Solid State Electronics
Keywords Organic field-effect transistor Organic semiconductor Pentacene
CLC TN386.1
Type Master's thesis
Year 2007
Downloads 294
Quotes 2
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OFET (Organic Field Effect Transistors, OFETs) is an organic semiconductor material for the active layer of the transistor device, compared with conventional inorganic semiconductor devices, having a low cost, large area processing can be realized, can be integrated with the flexible substrate, etc. advantages, has attracted wide attention in the worldwide. Performance parameters of the remarkable progress of the study of the recent more than a decade, the organic semiconductor materials and devices, processes, etc., OFETs migration rate, the switch current ratio has reached or exceeded the level of the amorphous silicon (a-Si: H) of the transistor device, variety of requirements of low-cost, large area of ??commercial electronic applications an attractive technology, such as smart cards, sensors, radio frequency identification, flat panel display and other fields. Currently, this requiring low-cost, large-area electronic applications market is substantially occupied based on the a-Si: H thin film transistor, however, to obtain a higher-performance device is of a-Si: H TFTs,> 200 ℃ The film-forming process, therefore, are limited to the integration of a-Si: H TFTs devices and polymer flexible substrate, OFETs can be compatible with the low temperature process, which is its another attractive advantages. This paper first reviews the history of the development of the OFETs outlined in OFET commonly used materials, including organic field effect semiconductor materials, electrode materials and insulating layer materials, In addition, the problems of this stage OFET research focus The future direction of development made summary. OFET structure, organic semiconductor carrier sub-transmission mechanism, OFET of Ⅰ - Ⅴ formula derivation, etc. illustrates OFET's working mechanism, and numerical methods of OFET conducted a simulation analysis of some of the parameters of OFET performance, get some interesting results. This paper focuses on this material pentacene introduced pentacene synthesis, characterization, such as deposition rate, substrate temperature, and other parameters on pentacene thin film properties of the preparation of the bottom electrode structure and five of benzene OFETs devices and p-Si / pentacene / Al diode structure devices, and as a measure of the the pentacene nature mobility; brief review of the new materials and five benzene materials and processes Research and solution methods prepared pentacene thin films, the films were characterized by means of AFM, SEM, XRD, and discuss the existing problems of the solution film-forming (spin coating). Finally, a summary of this paper work combined with the actual situation to discuss possible work in the future.

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