Dissertation
Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Light-emitting devices >

The organic semiconductor device capacitance properties of

Author LiNuo
Tutor HouXiaoYuan;DingXunMin
School Fudan University
Course Condensed Matter Physics
Keywords Device research An organic semiconductor Negative capacitance Capacitance ratio Organic light-emitting Hole pairs EL spectra OLED Electron injection Single layer device Light-emitting layer The organic Layer Admittance spectroscopy Voltage relationship Organic surface Film FET Interface barrier Discharge process Carrier transport Luminous intensity
CLC TN383.1
Type PhD thesis
Year 2007
Downloads 95
Quotes 0
Download Dissertation

Organic semiconductors are scientific research and industrial development in recent years, most research has potential application areas. The object of this thesis is the organic semiconductor device capacitance characteristics , the most important is the study of organic electroluminescent devices (OLED) capacitance - voltage characteristics and capacitance - frequency characteristics. The main contents are: device capacitance size and strength of the link between emission and its mechanism , the phenomenon of negative capacitance relationship with the luminescence mechanism of its formation , the use of the device during discharge measuring device capacitance transient methods . Includes the following two aspects: 1 . Different positions in the light emitting layer is doped with device capacitance characteristics : in the organic light emitting layer of the OLED layers at different positions , the doping concentration of the same thickness as the object of the same dye molecules , and the use of the method of measuring admittance spectroscopy study of the device capacitance - voltage (CV) and capacitance relations - frequency (CF) properties. Meanwhile, we also measured the doping device current - voltage - luminescence (IVB) and electroluminescent spectra and other optical properties. These results help us to give the OLED capacitance between the luminescence intensity , and provides the possibility of negative capacitance phenomenon , allows us to the phenomenon of negative capacitance mechanism and it is given between the light emitting devices a reasonable explanation. Further , in order to verify that we came to the conclusion , we have prepared another group of different doping concentration of the original doping device . Through the measurements of these devices , verification of the validity of the conclusions obtained earlier . (2) to establish the transient discharge process based device capacitance measurement methods : the use of different thickness of a single organic layer unipolar devices during discharge voltage - time evolution of relationships and device current - voltage characteristics analysis, combined with single layer device the equivalent circuit model and RC parallel circuit discharge theory, calculate the device capacitance - voltage relationship . Thus, we established a new research device capacitance - voltage relationship measurement method. In addition , a new method for the single device to the measured characteristic curve expressed by CV characteristic , we use the space charge capacitance capacitor to the device with the terminal voltage geometric changes in the characteristics , which were reasonably described.

Related Dissertations
More Dissertations