The Manufacture and Performance of AZO Thin Films and the Application in the Thin Film CIGS Solar Cell
|School||Harbin Institute of Technology|
|Keywords||AZO thin films RF magnetron sputtering CIGS solar cells|
In today's world energy crisis is worsening the situation, the study of solar cells made great development. The quality of the solar batteries, especially thin-film solar cell, its performance is strongly dependent on the performance of the transparent conductive film as a window electrode. Of ZnO: Al transparent conductive material, some of the advantages in its own become the most commonly used materials of the solar cell window layer. Therefore, the preparation process of the solar cells together research AZO transparent conductive film preparation process, the development is of great significance for the improvement of light conversion efficiency of solar cells and photovoltaic industry as a whole. The test 2 O 3 ZnO target AZO thin films prepared on glass substrates by rf magnetron sputtering, 2wt% Al studied the sputtering pressure sputtering power, substrate heating temperature and film thickness of the thin-film photovoltaic performance, at the same time, consider these preparation parameters applied to CIGS solar cells Scope, and AZO Films CIGS solar cell preparation process integration, study the impact of the film properties on the battery performance. Preparation and Properties of AZO films, electrical properties as a reference standard obtained optimum sputtering pressure 0.05Pa, and the best sputtering power of 750W, the best substrate heating temperature of 220 ° C. The best under the conditions of the preparation process parameters, the lowest sheet resistance of AZO thin films prepared 6.005Ω/sq, the lowest resistivity of 5.9 × -4 sup> Ω · cm, and the highest mobility for 20.3cm2 / V · S, the same time, within the range of the visible region, the transmittance of 87.5%. AZO thin films prepared hydrogen sputtering atmosphere study found that AZO thin films prepared with high alumina content of ZnO target hydrogen the photoelectric performance, especially in the light transmittance of the near-infrared bands does not improve This is probably because the content of the target material of aluminum are already very high, resulting in the carrier concentration in the film is still very high, so the near-infrared bands, the free carrier absorption is still high, the doping of hydrogen not achieve lower light absorption role. AZO film preparation process used in CIGS thin film solar cells, to study the the AZO film preparation process of the battery performance. The results show that the high sputtering power and the substrate heating temperature causes the performance of the battery to be damaged. Ultimately, we optimize the AZO thin films used in CIGS thin film solar cell window layer preparation process parameters: of sputtering pressure 0.05Pa, sputtering power 750W, substrate heating temperature of 160 ° C, the film thickness is 700nm. Improvement of the preparation process after the battery-absorbing layer, in order to process the sunken cell window layer, the highest efficiency of the obtained battery has reached 14.2%.