A design of driving circuit for high voltage grid based on BCD Technology
|School||University of Electronic Science and Technology|
|Course||Microelectronics and Solid State Electronics|
|Keywords||SPIC Gate Driver Circuit Level Shifter BCD process Layout|
This subject is supported by National Science and Technology Specific Projects "Process Development&Industrialization of New Energy-saving Driver and Automotive Electronics Chip".The thesis involves one typical Smart Power ICs (SPIC) chip, which is Gate Driver Circuit based on600V BCD process that characteristics of a high/low side, high-voltage and high-speed. The design specifications show as follows:the maximum bias voltage (VH) is600V, the maximum peak output current (Imax) is1A and the maximum operating frequency (fmsx) is100KHz. With good voltage-control stability, wide application field of medium and high frequency and fine self-protection ability, the circuit can be used in automotive electronics, such as the power systems of electric cars and hybrid cars.First, the requirements, the overall framework, the application topology and the design specifications of the overall gate driver circuit are proposed. Then, the detailed analysis and simulation of all sub-circuits are described, including input interface circuit, high/low dead-time circuit, high-side level shifter circuit and so on.Second, based on the sub-circuit’s basic principles and simulation results, the gate driver circuit’s basic theory are researched completely. By using the simulation software Hspice, the gate driver circuit’s properties are verified.Last, based on CSMC0.5μm600V BCD process, the sub-circuit layout design, the layout verification (DRC and LVS) and the overall circuit layout combination are finished together, as well as the final tapeout.