Time domain RF front-end spectral element method simulation
|School||Nanjing University of Technology and Engineering|
|Course||Electromagnetic Field and Microwave Technology|
|Keywords||Spectral-Element Time-Domain(SETD)Method physical model of PIN diode PIN limiter MESFET amplifier mixer RF front-end circuit|
Computational electromagnetic is widely applied in various fields. Compared with traditional analytic methods, it has wider application range and can solve more complex electromagnetic problems.Firstly, the basic principles and applications of Spectral-Element Time-Domain (SETD) method based on vector wave equations are described in this thesis.Then, the derivation of circuit-field coupled SETD formulas is expressed, based on which a simple PIN diode model with forward and reverse recovery is analysed. In this thesis, the R-I curve of PIN diode produced by SKYWORKS is matched based on the physical model of PIN tube parameters optimization. In addition, this thesis adopts SETD algorithm to achieve the simulation and research of plane micro-strip configuration loading frequency(RF) devices, such as PIN limiter, MESFET microwave amplifier and mixer. And the simulation results are proven correct compared with experimental results.Finally, in this thesis, a PIN limiter, a MESFET amplifier and a microwave mixer are put together to form a simple RF receiver front-end circuit system. And the software which has humanity interface based on the method to analyse microcircuit problems is developed, the software can provide a full-wave analysis of RF front-end circuits.