Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor

Microstructure and Properties Behavior of Dual Acceptor Doner Doped ZnO Thin Films

Author LeiLi
Tutor MengXiangLong
School Harbin Institute of Technology
Course Materials Physics and Chemistry
Keywords ZnO thin films Double by Shi - donor doping RF magnetron sputtering Photoluminescence
CLC TN304.2
Type Master's thesis
Year 2011
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This article by RF magnetron sputtering method has been successfully prepared Ga-N and Ag-Ga-N-doped ZnO films. System to study the impact of process parameters on the structure and performance of the yuan doped ZnO film microstructure. Using the atomic force microscope (AFM), X-ray diffraction (XRD), X-ray energy dispersive spectrum (EDS), X-ray photoelectron spectroscopy (XPS), fluorescence spectrophotometer, and Hall-effect test system of multiple doped ZnO The surface morphology, phase structure, optical and electrical properties. The results showed that the ZnO thin film surface roughness with sputtering power, substrate temperature, annealing temperature increases and decreases with increasing pressure of the increased first 2 content with an atmosphere of N then decreases; surface particle size with sputtering power, substrate temperature, annealing temperature increases with the increase of the pressure and atmosphere N 2 content first decreases and then increases. O in the film, mainly in the Zn-O bond exists, another exist in a free manner; N exists mainly in the manner of the Ga-N or Zn-N; O content of Ag doped free reduce, but the N by N 2 , (NH4), (NH2) - the form of relatively increased. The study showed that the room temperature, polyhydric doped ZnO films by exciton recombination caused by UV emission peak around 371nm, the emission intensity was significantly dependent on the film grain size, and with the increase of the film grain, ultraviolet light emitting strength ; purple band, there is a 396nm Ga-N donor acceptor recombination luminescence, indicating that the elements N and Ga doped into the lattice sites of ZnO films and the formation of donor-acceptor pair; Ag doping, yellow and orange light light emitting intensity decreases, indicating that the introduction of Ag, Oi generation is suppressed; After annealing, the UV peak position redshift 2nm, showed that after annealing the film bandgap narrowing; when the annealing temperature of 620 ° C was observed in the 529nm at AgZn characteristics of luminescence, indicating that under the appropriate annealing temperature of Ag atoms can enter the lattice spaces of the ZnO thin film, formed by the main AgZn, and in the conduction band electron recombination. 20K Multivariate doped ZnO thin bit of the calculation of the emission peak of the PL spectra analysis results show that the acceptor NO level in the valence band top the 142meV Department, low-94meV-124meV at the donor GaZn energy levels in the conduction band; Ag doping neutral donor exciton recombination luminescence intensity improved significantly, indicating that the Ag introduction of the ZnO films lattice distortion, and thus the introduction of more donor. Ag-Ga-N-doped ZnO film, the electron carrier concentration was increased due to the introduction of the Ag, and the Hall mobility decreased. The sputtering power is 80W, and the pressure of 2Pa, N 2 content of 40% under the conditions obtained in Ag-Ga-N-doped ZnO films by annealing at 700 ℃ after the maximum concentration of the electron carrier n = 2.44 1019/cm3, minimum resistivity ρ = 0.213Ωcm.

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