Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > General issues > > Semiconductor thin film technology

Research on Fabrication and Electrochemical Properties of Highly Boron-doped Si/BDD Thin-Film Electrode

Author ChenPeng
Tutor ManWeiDong
School Wuhan Institute of Technology
Course Materials Science
Keywords Microwave plasma Chemical vapor deposition Boron-doped diamond film Electrochemical properties Etching
CLC TN304.055
Type Master's thesis
Year 2011
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With the improvement of people's living standards, the water quality requirements are increasing, but the industrial production in the wastewater and water pollution has been worsening, which is bound to find better ways to solve these problems as soon as possible. In today's society, \biodegradable methods are difficult to directly remove the need for assisted electrochemical catalytic method, and plays a central role in determining the electrode catalytic ability, current efficiency and service life of the electrode in the electro-catalytic process currently used electrode material many inadequacies, such as the oxidation is not complete, the surface easy passivation short life. Boron-doped diamond film (Boron-Doped Diamond Film: BDD) as a new type of electrode material, has recently been great concern of the people still have low adsorption characteristics and strong resistance to corrosion in strong acid medium inert surface; in water and non-aqueous solution electrolysis, has a wide electrochemical potential window compared with other electrode materials with better chemical and physical properties, showing the potential advantages of the application, the article focuses on the conductive diamond film electrodes wastewater treatment applications, the latest research results, the BDD electrode facing applications at the same time the outlook. This article MPCVD method in highly doped boron-doped diamond film grown on a silicon substrate, and the four-point probe, scanning electron microscopy, Raman electrochemical workstation to detect, found that the preparation of boron-doped diamond film resistors rate 10 -2 Ω · cm, also found that the decline in the quality of diamond film due to the incorporation of boron atoms using cyclic voltammetry, electrochemical properties, results show that, compared with the Pt electrode, the BDD electrode having a wide electrochemical window, the low background current; choice of a highly doped silicon substrate so that the wire access from the conductive substrate, it is possible to provide more working area for Si / BDD electrode thereby saving manufacturing cost; iron potassium cyanide electrolyte, the electrochemical reaction of the electrode surface has good quasi-reversibility, and the electrode surface has good stability was found in the detection of catalytic oxidation of organic phenol: compared with the Pt electrode, the the BDD electrode oxidation ability, and the oxidation product of simple, thorough, and found that a homemade analog sewage treatment experiments with homemade BDD electrode, high boron-doped Si / BDD electrode is practicable in the efficient processing of organic sewage, and is expected to replace the traditional electrode to a new generation of green materials. BDD electrode order to fix the surface damage, its surface planarization process, because the surface irregularities may cause the electrode surface the local current density is too large and larger corrosion pits, but the diamond has a high hardness, processing difficulties, Therefore, in order to improve the smoothness of the surface of the BDD electrode, the need to find a higher material to the diamond etching efficiency using a microwave plasma chemical vapor deposition (Microwave Plasma Chemical Vapor Deposition, MPCVD), in the hydrogen plasma effect study Fe and Co, the etch rate of CVD diamond film. Etching effect was observed by SEM, and its surface structure characterized by Raman spectroscopy. The results show that: the role of the hydrogen plasma, Fe and Co on the diamond surfaces are obvious corrosive effect, wherein a higher etch rate of the Fe, and by controlling the thickness of the dissolved carbon material, to achieve the etching rate and the effective control of the amount of etching. After treatment of the sample after etching with the mixed acid and acetone, to obtain a quality comparable with the original diamond.

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