Study on the Preparetion and Optical and Electrical Properties of Transparent Conductive Aluminium Doped Zinc Oxide Thin Films
|School||Harbin Institute of Technology|
|Course||Chemical Engineering and Technology|
|Keywords||Doping Sol - gel AZO thin films Optical and electrical properties|
Transparent conductive aluminum doped zinc oxide (AZO) film with the currently widely used because of their resistivity and the transmittance in the visible range of the fluorine-doped tin oxide (ITO) film is considerable, and in the stability of the hydrogen plasma was higher than ITO films, therefore , AZO transparent conductive film to replace the ITO film has become a hot spot of the current study . Ethylene glycol monomethyl ether as solvent , zinc acetate as the precursor , monoethanolamine as a stabilizer , aluminum chloride as a dopant , the sol - Gel Fa Tila system transparent conductive AZO thin films . AZO thin-film photovoltaic performance of process parameters on the sol concentration , the amount of Al-doped pretreatment temperature and annealing temperature . The results show that , when the sol concentration , Al3 doping amount , pretreatment temperature and the annealing temperature was 0.5 mol / L , 1.2 % , 400 ° C and 550 ℃ AZO film obtained better performance , its surface resistivity was 8.0 x 103 ? / □, the visible light transmittance higher than 85%. X -ray diffraction instrument (XRD), scanning electric microscopy (SEM) , atomic force microscopy (AFM) , four-probe tester and UV - visible absorption spectroscopy ( UV - VIS ) and other means of testing the film micro- structure and surface resistance and optical transmittance were characterized . The experimental results show that the obtained AZO film with (002) preferential orientation of the hexagonal structure AZO film surfaces smooth dense , uniform grain particle size of approximately 40nm . The sol concentration reduced from 0.25mol / L increased to 1 mol / L , when A13 doping amount increased from 0.5% to 1.5% , the surface resistance of the AZO films presented with the sol concentration and A13 doping of the amount of the raise increasing trend , AZO film surface when the sol concentration of 0.5mol / L, A13 doping amount of 1.2% , the lowest resistance ; when the pretreatment temperature from 200 ℃ was increased to 400 ° C , the annealing temperature is increased to 550 ° C from 450 ℃ , with the pre- the treatment temperature and the annealing temperature increased , the surface resistance of the AZO thin films render decreased ; AZO thin films in the visible region , the transmittance decreases with the increase in the concentration of the sol , with the A13 doping amount of the annealing temperature and the improvement is increased , while pretreatment temperature on the AZO film a transmittance in the visible region has little effect.