Dissertation
Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices

LDMOS structure of a MOSFET based research

Author LengZuo
Tutor WangYiWen;LiuTie
School University of Electronic Science and Technology
Course IC Engineering
Keywords LDMOS Breakdown Voltage On-Resistance Structure design Process design
CLC TN386
Type Master's thesis
Year 2011
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As VLSI increasing degree of integration, shrinking of component size, the constant increasing in frequency and continue to lower power consumption, power supply voltage required components continually to reduce operating ,otherwise current grows continuously. MOSFET plays an important role in variety of power conversion, especially on the high-frequency power conversion because of it’s high switching speed and low switching losses and drive. The role also set higher demands for the MOSFET of lower breakdown voltage and higher on resistance. With the development of the Lateral double-diffused MOS transistor (LDMOS), the performance of high voltage, good thermal stability, frequency stability and higher gain, which makes LDMOS becomes the key technology of high-voltage integrated circuits and power integrated circuits ,which has entered every household and been used widely in many area such as aviation, aerospace, control systems, communications systems, weapons systems and so on.Base on fully understood and analyze domestic and international electric power devices and effects of electrostatic discharge. This paper put forwards the scheme of MOSFET device which based on the structure of LDMOS, also adding the process design of contact channel, insulated plate and contact drain. Through the simulation experiment, LDMOS device resolves effectively conflicts of traditional structure effectively that if people increase reverse breakdown voltage of the device , which cause the device on-resistance increases. New program will improve the performance and power components further more.

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