Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Oxide semiconductor

Synthesis of P-type ZnO Thin Films Using the Successive Ionic Layer Adsorption and Reaction Method

Author GuoZhe
Tutor ZhangDaoLi
School Huazhong University of Science and Technology
Course Microelectronics and Solid State Electronics
Keywords p-type zinc oxide Successive ionic layer adsorption and reaction method Optoelectronic properties
CLC TN304.21
Type Master's thesis
Year 2009
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ZnO is a direct band gap II-VI compound semiconductor materials in the field of optoelectronic applications and broad prospects, is expected to replace the GaN used to a new generation of short-wavelength light emitting devices . But difficult to prepare p-type ZnO , which restricts the development of ZnO has become the bottleneck of its application . In this paper, the completion of the successive ionic layer adsorption reaction of ZnO thin films . By comparing the experimental conditions , we propose that the optimum deposition conditions . Ethanolamine as the alkaline reagent added to the the zinc ammonia solution , can reduce the dissolution of the film . The two - step annealing treatment , the volatilization of the residual organics in the film and the film grain recrystallization process separately , can form a better crystal structure . The in continuous ion layer adsorption and reaction method introducing heat treatment process , and greatly improve the performance of the ZnO thin film , the film formed has good c-axis preferentially oriented , transparent and conductive properties has also been significantly improved . Li as dopant is added to ZnO , the p - type ZnO films can be prepared when the doping concentration of 5% . Combination of X-ray diffraction , absorption spectroscopy , photoluminescence spectra and Hall-effect analysis , we studied the mechanism of action of Li in ZnO , Li substitutional doping low concentrations exist , will form fill high concentration doping gap , the resulting donor impurity cause the thin film of p-type to n - type . O2 annealing atmosphere and the annealing temperature to reduce the donor impurity in the film , thus promoting the formation of p-type ZnO films . The crystal structure analyzed Li doped forms exist in the ZnO and the formation of a grain size of 17.0 1 < / sup> 8.8 nm , the lattice constant a, c 3.25 (A | °) and 5.20 , respectively ( A | °), stacking layers of about 33 layers . The optical performance analyzes ZnO band gap is mainly distributed in the 3.27 3 .29 eV, its light curve contains four emission peak . The final preparation of the resistivity of p-type ZnO material 1.04Ωcm, Hall mobility of 0.75 cm 2 / Vs and carrier concentration is 8.02 × 18 < / sup> cm < sup > -3 . Through the analysis of the PL spectrum , the formation of acceptor level energy of 91 meV.

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