Dissertation > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy

Study on the Graphene Preparation on Cu–Ni Alloy Substrate by Chemical Vapor Deposition

Author WangBoLin
Tutor LiXingZuo
School Nanjing University of Posts and Telecommunications
Course Optics
Keywords Graphene Chemical vapor deposition method Copper-nickel alloy Magnetron sputtering Benzene
CLC O484.1
Type Master's thesis
Year 2012
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Graphene is the latest member of the carbon material , the perfect two-dimensional structure , and many of the peculiar nature of aroused great interest of researchers around the world . Existing graphene prepared many ways , most of them by doping , catalytic , substrate , and temperature factors limiting the application of graphene . With benzene as a carbon source , preparation of graphene on copper nickel alloy substrate , and explore new ways of graphene prepared by CVD . The dual target magnetron of Sputtering three copper nickel alloy thin film as a substrate , wherein the sputtering power of the nickel target remains the 100W unchanged , the copper target of the sputtering power for 50W , 100W , 150W . Characterization of the X - ray spectrum of the sample , the precise determination of the ratio of the elements of the alloy films in copper-nickel . As a control, were also prepared the two pure copper, nickel, a metal thin film substrate . XRD patterns of the film substrate . Select the same substrate at 800 ° C , 600 ° C , 400 ° C the temperature of the variable temperature experiment , the influence of temperature on the graphene growth . Experimental results show that : benzene as a carbon source, a copper-nickel alloy as the substrate, may be grown at a low temperature of 400 ℃ graphene . Continuing to reduce the temperature below 200 ° C , thoroughly observed less graphene any information , and provides a reference variable temperature experiments graphene prepared at a low temperature . Variable temperature experiments at 400 ℃ substrate than the experimental study the substrate copper-nickel elements of different proportions of graphene growth . The experimental results show that : the mass fraction of copper in the alloy substrate is greater the faster the growth rate of the graphene . Because graphene precipitation mechanism growth on the nickel surface , the copper surface is mainly grown adsorption mechanism . 400 ° cryogenic carbon atoms is difficult to \The impact is not significant . Low temperature graphene on copper-nickel alloy thin film substrate mainly to the growth of surface adsorption mechanism . Followed by the pure copper film as a substrate under the same conditions the experiment , the graphene growth effect is not good , the reason , this is mainly related to the catalytic activity of the copper, nickel . Substrate copper greater mass fraction , the lower the catalytic activity , the cleavage rate of benzene dehydrogenation also lower , thus reducing the rate of growth of the graphene .

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