Study on the Graphene Preparation on Cu–Ni Alloy Substrate by Chemical Vapor Deposition
|School||Nanjing University of Posts and Telecommunications|
|Keywords||Graphene Chemical vapor deposition method Copper-nickel alloy Magnetron sputtering Benzene|
Graphene is the latest member of the carbon material , the perfect two-dimensional structure , and many of the peculiar nature of aroused great interest of researchers around the world . Existing graphene prepared many ways , most of them by doping , catalytic , substrate , and temperature factors limiting the application of graphene . With benzene as a carbon source , preparation of graphene on copper nickel alloy substrate , and explore new ways of graphene prepared by CVD . The dual target magnetron of Sputtering three copper nickel alloy thin film as a substrate , wherein the sputtering power of the nickel target remains the 100W unchanged , the copper target of the sputtering power for 50W , 100W , 150W . Characterization of the X - ray spectrum of the sample , the precise determination of the ratio of the elements of the alloy films in copper-nickel . As a control, were also prepared the two pure copper, nickel, a metal thin film substrate . XRD patterns of the film substrate . Select the same substrate at 800 ° C , 600 ° C , 400 ° C the temperature of the variable temperature experiment , the influence of temperature on the graphene growth . Experimental results show that : benzene as a carbon source, a copper-nickel alloy as the substrate, may be grown at a low temperature of 400 ℃ graphene . Continuing to reduce the temperature below 200 ° C , thoroughly observed less graphene any information , and provides a reference variable temperature experiments graphene prepared at a low temperature . Variable temperature experiments at 400 ℃ substrate than the experimental study the substrate copper-nickel elements of different proportions of graphene growth . The experimental results show that : the mass fraction of copper in the alloy substrate is greater the faster the growth rate of the graphene . Because graphene precipitation mechanism growth on the nickel surface , the copper surface is mainly grown adsorption mechanism . 400 ° cryogenic carbon atoms is difficult to \The impact is not significant . Low temperature graphene on copper-nickel alloy thin film substrate mainly to the growth of surface adsorption mechanism . Followed by the pure copper film as a substrate under the same conditions the experiment , the graphene growth effect is not good , the reason , this is mainly related to the catalytic activity of the copper, nickel . Substrate copper greater mass fraction , the lower the catalytic activity , the cleavage rate of benzene dehydrogenation also lower , thus reducing the rate of growth of the graphene .