Study on Low Temperature Sintered PSN-PZT Piezoelectric Ceramics
|School||Huazhong University of Science and Technology|
|Course||Microelectronics and Solid State Electronics|
|Keywords||piezoelectric ceramics low- temperature sintering doping piezoelectric properties|
In order to satisfy the requirements of actuator for practical applications, the properties of piezoelectric ceramics should combine a low sinter temperature and high electrical performances such as a high electromerchant coupling factor （k31）, a high piezoelectric constant （d33） and proper mechanical quality factor （Qm）. The ternary piezoelectric ceramics of 0.02Pb（Sb0.5Nb0.5）O3-0.98 Pb （Zr0.51Ti0.47）O3 （PSN-PZT） was investigated in this work from aspects of dopants addition, flux addition and process.The properties of PSN-PZT ceramics synthesized by conventional mixed oxide process and doped by Fe3+, Ba2+ were studied. Dielectric and piezoelectric properties were significantly improved by doping Fe3+ （0.35%mol） due to the increase of grain size and the densification of ceramic. The further doping of Ba2+ and modifying calcine process also enhanced the properties.To further decrease the sinter temperature, the Fe3+, Ba2+doped PSN-PZT ceramics with addition of oxide and B-Si-Pb glass powder were studied. Results domanstrated that proper B-Si-Pb glass powder doping could improve the performance of PSN-PZT ceramics at temperature as low as 1100℃,however,dielectric and piezoelectric properties significantly decreased when sinter temperature went down to 1075℃, which indicated that B-Si-Pb glass powder is not effective enough. When doped with ZnO, ceramics sintered at 1050℃could still achieve fine properties; when doped with both ZnO and SiO2, ceramics was densified, and optimal values ofεr, d33, k31 and Qm were obtained at 1050℃, which were 1657.4, 425pC/N, 0.345, 58.5 respectively, indicating that PSN-PZT+0.1wt%ZnO+0.1wt%SiO2 ceramics are potential for practical applications.