Dissertation
Dissertation > Industrial Technology > General industrial technology > Industrial common technology and equipment > Thin-film technology

Preparation of Flexible ZnO:Al Thin Films by Magnetron Sputtering and Studies on Their Photoelectric Properties

Author ZhangHui
Tutor ShenHongLie;FengXiaoMei
School Nanjing University of Aeronautics and Astronautics
Course Materials Physics and Chemistry
Keywords AZO thin films Magnetron sputtering Flexible substrates Hall effect Transmission spectrum Quality factor
CLC TB43
Type Master's thesis
Year 2010
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PEN and PET substrate at room temperature flexible AZO film prepared by rf magnetron sputtering . The results showed that the experimental flexible AZO film prepared hexagonal structure , and has a good c-axis preferred orientation . Sputtering power , working pressure , substrate types , Ar gas flow growth conditions on the structure , optical and electrical properties of the film has a certain influence . Working pressure increased deterioration of Thin Films , the film resistivity increases , the band gap is narrowed due to Burstein-Moss effect . Sputtering power of 150W , Ar gas flow optimized conditions 20sccm and working pressure of 0.05Pa the PEN substrate AZO thin films deposited by the highest quality factor , 1.78 × 10 4 Ω - 1 · cm -1 , the film resistivity, carrier concentration , and the hall mobility were 1.11 × 10 -3 < / SUP > Ω · cm , 4.14 × 10 < SUP > 20 cm -3 and 13.60 cm 2 · V -1 < / sup > · s -1 the visible absolute transmittance of the film reaches 95.70% . PET and glass substrates at room temperature AZO / Ag / AZO multilayer films prepared by RF magnetron sputtering in the the AZO film based on optimizing the growth and the Ag layer thickness , the the Ag layer sputtering power and substrate the influence of the type of multi-layer film structure and optoelectronic properties . The results show that , AZO / Ag / AZO multilayer film rendering the ZnO ( 002) and Ag (111 ) preferred orientation , and the intensity of the diffraction peak of Ag (111) is increased with the increase in the thickness of the Ag layer . Thin film conductive enhanced, but with the increase in the thickness of the Ag layer in the initial stage of growth of the Ag layer , the Hall mobility is affected by interface scattering decreases . Ag layer sputtering power was 200W, and the Ag layer thickness is 24nm optimized conditions , the film the highest quality factor , the resistivity of a multilayer film is deposited on PET , transmittance, and quality factor respectively 3.97 × 10 - 5 Ω · cm , 78.67% and 6.59 × 10 4 Ω -1 · cm -1 < / sup> .

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