Preparation of Flexible ZnO:Al Thin Films by Magnetron Sputtering and Studies on Their Photoelectric Properties
|School||Nanjing University of Aeronautics and Astronautics|
|Course||Materials Physics and Chemistry|
|Keywords||AZO thin films Magnetron sputtering Flexible substrates Hall effect Transmission spectrum Quality factor|
PEN and PET substrate at room temperature flexible AZO film prepared by rf magnetron sputtering . The results showed that the experimental flexible AZO film prepared hexagonal structure , and has a good c-axis preferred orientation . Sputtering power , working pressure , substrate types , Ar gas flow growth conditions on the structure , optical and electrical properties of the film has a certain influence . Working pressure increased deterioration of Thin Films , the film resistivity increases , the band gap is narrowed due to Burstein-Moss effect . Sputtering power of 150W , Ar gas flow optimized conditions 20sccm and working pressure of 0.05Pa the PEN substrate AZO thin films deposited by the highest quality factor , 1.78 × 10 4 sup > Ω - 1 · cm -1 sup>, the film resistivity, carrier concentration , and the hall mobility were 1.11 × 10 -3 < / SUP > Ω · cm , 4.14 × 10 < SUP > 20 sup> cm -3 sup> and 13.60 cm 2 sup > · V -1 < / sup > · s -1 sup > the visible absolute transmittance of the film reaches 95.70% . PET and glass substrates at room temperature AZO / Ag / AZO multilayer films prepared by RF magnetron sputtering in the the AZO film based on optimizing the growth and the Ag layer thickness , the the Ag layer sputtering power and substrate the influence of the type of multi-layer film structure and optoelectronic properties . The results show that , AZO / Ag / AZO multilayer film rendering the ZnO ( 002) and Ag (111 ) preferred orientation , and the intensity of the diffraction peak of Ag (111) is increased with the increase in the thickness of the Ag layer . Thin film conductive enhanced, but with the increase in the thickness of the Ag layer in the initial stage of growth of the Ag layer , the Hall mobility is affected by interface scattering decreases . Ag layer sputtering power was 200W, and the Ag layer thickness is 24nm optimized conditions , the film the highest quality factor , the resistivity of a multilayer film is deposited on PET , transmittance, and quality factor respectively 3.97 × 10 - 5 sup > Ω · cm , 78.67% and 6.59 × 10 4 sup > Ω -1 sup > · cm -1 < / sup> .