Adulteration Study of P-type Transparent Conducting Oxide CuAlO2
|School||Harbin Institute of Technology|
|Course||Condensed Matter Physics|
|Keywords||CuAlO2 ceramic CuAlO2 film Pulsed laser deposition (PLD) Optoelectronic properties|
CuAlO 2 film Kawazoe et al in 1997 with a chemical modification (CMVB) based on the price of the theory for the first time prepared delafossite structure p-type transparent conductive oxide films. Since CuAlO 2 film was found to be a p-type transparent conductive oxide, has aroused widespread concern. However, a good preparation performance CuAlO 2 film has been a problem, so far, has studied a variety of the preparation CuAlO 2 films, including pulsed laser deposition ( PLD), magnetron sputtering, chemical vapor deposition. In order to prepare a the performance CuAlO 2 film, paper first explores the quality CuAlO 2 ceramic target preparation process. We chose Cu 2 O, Al 2 O 3 , MgO, and CaO powder as raw material, synthesized by conventional solid-state reaction method undoped The heteroaryl and Mg, Ca-doped CuAl 1-x M X O 2 (M = Mg, Ca, x = 0,0.0025 0.005,0.01,0.015,0.02) ceramic target, by means of XRD, SEM, four-probe test on the target structure, morphology, electrical properties were characterized and analyzed. XRD analysis showed that the undoped CuAlO 2 ceramic target all diffraction peaks from CuAlO 2 , Mg, Ca-doped CuAlO 2 sub > The the ceramic target's main diffraction peak from CuAlO 2 , there is a small amount of CuO peak. SEM analysis showed that the higher the sintering temperature is more conducive to CuAlO 2 ceramics form a large grain. Four-probe test results show that the conductivity of the undoped CuAlO 2 ceramic has reached 9.87 × 10-3S/cm, the mg and CA-doped CuAlO 2 conductivity of ceramics increased and then decreased with increasing the doping concentration reached the doping concentration of 1%, maximum value, respectively of 2.34 × -2 sup> S / cm 2.016 × 10 -2 sup> S / cm. Taking into account the advantages of pulsed laser deposition, we synthesized using conventional solid-state reaction method using the pulsed laser deposition method CuAlO CuAlO 2 2 ceramic as a target on sapphire substrates prepared by the film. Were characterized by XRD, SEM, UV - visible spectrophotometer, Keithley4200-SCS Semiconductor Parametric Test System CuAlO 2 thin film phase composition, surface and cross section, optical properties, electrical properties, characterization and analysis . XRD analysis prepared under different conditions CuAlO 2 films are polycrystalline structure, the main diffraction peak from CuAlO 2 . SEM analysis showed that the undoped and doped CuAlO 2 film sample are relatively uniform and dense, and good combination with the substrate. Spectroscopy showed that prepared in the different conditions CuAlO 2 a visible light transmittance of the film has reached more than 75%, the transmittance of the film. Electrical performance analysis results show that the CuAlO 2 film conductivity by the substrate temperature and the oxygen partial pressure greater impact, a higher substrate temperature and a lower oxygen partial pressure is more conducive to the thin film conductive improved.