Preparation, Property and Application of Tin Sulfide and Their Complex Thin Films
|School||Hefei University of Technology|
|Keywords||Tin sulfide Complexes Preparation Performance Thin Film Solar Cells|
This article was prepared by hydrothermal SnS 2 sub > and its complex and SnS its composite Nanomaterials and film and thin film solar cells prepared by dipping the legal system . XRD and TEM analysis of the crystal type and particle morphology of nanomaterials ; measurement of thin films of UV- Vis , UV - Vis -NIR absorption properties , and thus to study the optical band gap of the film ; while also measuring the film the photovoltaic performance of electrochemical impedance spectroscopy and battery . The experimental results show that the Sn (II ) doped SnS 2 the the Sn 2 sub > S 3 < / sub > generated , Cu (Ⅱ) doping of SnS < sub> 2 occurred lattice substitution ; Sn (Ⅳ) doped SnS SnS produce lattice defects , Cu (II ) -doped SnS is Cu 4 sub > of SnS < sub > 4 generated ; SnS 2 sub > and its complex film at a wavelength of about 500nm , there is a clear absorption beginning SnS its complex film at a wavelength of 1000nm about an obvious absorption beginning ; and SnS 2 sub > indirect bandgap , and SnS direct bandgap size dopant type and doping amount ; different film interface transfer resistance and electronic transmission time within the film significantly different ; FTO / of SnS 2 sub > : Cu ( II) / of SnS / Sn structure of , thin - film solar cell photovoltaic performance test results : the short-circuit current density 37.5μA/cm 2 sup> open voltage is 130mV , the fill factor of 0.35, and photoelectric conversion efficiency was 0.05%.