CMOS image sensor parallel test development
|Keywords||CMOS image sensor Chip testing Image acquisition Probe card design|
The image sensor is able to feel the optical image signal and converts the electrical signal output of the device . The image sensor of the main points of a CCD (Charge Coupled Device, charge-coupled device ) and CMOS (Complementary Metal- Oxide Semiconductor , a complementary metal oxide semiconductor element ) two types . Inconvenient due to the process of different CCD image sensing circuit and control circuit are integrated together. CMOS image sensors due to the image unit and the control unit using CMOS technology , and therefore can be integrated on a single chip . CMOS image sensor is more and more widely , completely over the CCD market , thus CMOS image sensor design and manufacture of increasingly high requirements for cost control . The CMOS image sensor test is different from the general logic circuit , it requires the optical testing, resulting in the entire test system and the test system in general is different in the test light source, and the acquisition and processing system on the image data output of the test chip , such as image acquisition card . Therefore , the cost of test of the image sensor chip is relatively high. The paper mainly of wafer -level testing of the CMOS image sensor , a plurality of improvements introduced for the parallel test system of the image sensor and reduce the test time . Select models of automatic test machine test system hardware design to the maximum with the measured number of design in order to effectively reduce the cost of test .