Parameters Effects on the Phase Structure of Boron Nitride Films
|School||Beijing University of Technology|
|Course||Condensed Matter Physics|
|Keywords||Microwave electron cyclotron resonance chemical vapor deposition Plasma- enhanced chemical vapor deposition RF magnetron sputtering Orientation hexagonal boron nitride , CBN Negative bias to Substrate temperature|
Hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) due to its excellent physical and chemical properties are more and more attention as a new synthetic functional materials, they have a very wide range of applications. In this paper, electron cyclotron resonance chemical vapor deposition (MW-ECR-CVD), RF coupled plasma enhanced chemical vapor deposition (PECVD) and RF magnetron sputtering technique a completely oriented growth of h-BN films . Using FTIR, XRD, AFM, XPS and other means for depositing thin films were characterized by FTIR results and systematic study of deposition parameters on the h-BN films oriented growth. The results show that the orientation of h-BN films only in a suitable reaction gas partial pressure ratio can be prepared out ; first discovered temperature on the h-BN films oriented growth has a decisive role : at low temperatures , since the film after its lateral growth nucleation rate greater vertical growth rate , the results of h-BN film growing c-axis parallel to the substrate surface ; temperature , the critical nucleus vertical growth rate than the lateral growth rate, the results of h-BN film growing c-axis perpendicular to the substrate surface. Also found a negative bias is applied to the substrate excessive deposition of thin films will destroy long-range order which led to the growth of randomly oriented . Further use of hot filament assisted electron cyclotron resonance chemical vapor deposition and RF magnetron sputtering technique with a high content of cubic BN films , mainly studied the RF power and hot-wire current opposition isotropic formation. It was found that the cubic phase only formed under certain RF power and the size of the hot filament current of c-BN nucleation and growth has important implications . Finally, we BN substrate negative bias enhanced nucleation mechanism of a preliminary theoretical discussion .