Dissertation
Dissertation > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Infrared technology and equipment > Infrared detection,infrared detectors

Resonant cavity enhanced GaInAsSb infrared photodetector research

Author LiJun
Tutor SongHang
School Graduate Schoo,Chinese Academy of Sciences
Course Condensed Matter Physics
Keywords Infrared detectors Resonant cavity enhanced GaSb / InAs Distributed Bragg Reflector GaInAsSb / GaSb MOCVD
CLC TN215
Type Master's thesis
Year 2004
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The structure of the conventional probe and PIN , resonant cavity enhanced (Resonant Cavity-Enhanced, RCE) photodetectors have both a high quantum efficiency and high bandwidth , particularly for high-speed probing . In this paper, RCE photodetector studied, designed GaInAsSb RCE device structure , and computer simulation of the device . Grown by MOCVD method PIN structure GaInAsSb infrared detector material and produce out of the device . Computer simulation of the spectral response of a device produced and compared with the results of the measurement . Analysis of the resonant cavity enhanced infrared detector characteristics are discussed in detail strong resonance enhanced quantum efficiency of the detector , and discusses the absorption of the mirror on the quantum efficiency of the device . Discussed in detail cavity quantum efficiency of a resonance quality factor Q of the cavity larger cavity quantum efficiency of the device the greater the results. Influences the cavity are discussed in detail detector bandwidth -enhanced several factors. To design a good performance of the RCE detector provides a theoretical preparation. Demonstrated GaSb / InAs quarter -wave stack (QWS) as working in the 2.4μm GaInAsSb RCE detector DBR 's feasibility and TMM method to calculate the GaSb / InAs QWS reflectivity and phase shift. Design an incident from the substrate GaInAsSb RCE detector structure, device performance was simulated and discussed in detail GaSb / InAs QWS reflectivity , the phase shift and the absorption of the device performance. Devices designed bimodal response characteristics can be used as two-color detector. A PIN structure made ??by MOCVD GaInAsSb infrared detector material , and produce a detector device , the spectrum of the device was measured . Obtained by computer simulation PIN-type GaInAsSb infrared detectors at 500K under the irradiation of blackbody radiation spectral response , and with the actual measurements were compared. Comparison shows that the calculated results and experimental results are close , the main difference is the difference of the peak position of 0.07μm, and the calculated value on the longer wavelength is high. This suggests that using a computer simulation method can get more accurate results.

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