Dissertation > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory

The Fabrication and the Mechanism Research of the Micro-and Nano-Resistive Memory

Author LiZuo
Tutor FangLiang
School National University of Defense Science and Technology
Course Electronic Science and Technology
Keywords Non-Volatile Memory Titanium Oxide Mechanism Research SRS Model Electrodes
Type Master's thesis
Year 2010
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The traditional volatile and non-volatile semiconductor memories play a very important role in the large-scale use of computer, however, in the face of the increasing requirement from the user, the traditional computer memories have not met the needs, which makes the research of the new-type computer become imperative. It is a new and essential research fields in the computer technology. The resistive memory is one of them, which is usually achieved as the Cross-Bar structure. Due to the simple structure, low power-consuming, low cost and huge integration level, the resistive memories has been a very important research direction in the international research field.This article illustrates the work as follows:1. The resistive memory arrays which are based on the titanium oxide and Rose Bengal are fabricated. Fabrication process includes the pre-preparation, bottom electrodes fabrication, middle layer fabrication and top electrodes fabrication. This paper elaborates the various technology and methods in the fabrication process, meanwhile gives the various fabrication parameters and results.2. Research the principle and performance of the titanium oxide which is based on the symmetrical electrodes. Through the memory array testing, we put forward SRS model which is based on the Schottky-like and the oxygen vacancies principle. Finally, from this model, we get the mathematical relationship between the ON current and the thickness of middle layer, the area of electrodes and the density of oxygen vacancies. Increasing the width of electrodes and density of oxygen vacancies and reducing the thickness of middle layer will raise the ON current.3. Research the Rose Bengal memory cell which is based on the Al/ITO electrodes. Through the contrast experiments, we find that aluminum is regarded as the main reason for the bistable phenomenon. At last, we illustrate the principle of the bistable phenomenon of the Al/Rose Bengal/Pt.4. Research the inorganic titanium oxide memory array which is based on the Al/Pt asymmetrical electrodes. We find the asymmetrical bistable phenomenon which cannot be got from the Pt/Pt electrodes. The asymmetry bistable phenomenon can be used to solve the wrong-reading problem in the Cross-Bar structure, because the flow direction of current can be discerned. In the end, we get the mathematical relationship among the current, voltage and potential barrier resistance through the SRS model.

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